TEG1-241-1.4-1.2 High Efficiency Semiconductor Thermoelectric Generator Hot Surface Temperature 200 Degree

High efficiency semiconductor thermoelectric generator, TEG1-241-1.4-1.2 high power hot surface, temperature 200 degreeThe following data are tested at a constant temperature difference of 120 degrees, the environment is different, the data will be different, for reference only Size: 40mmx40mmx4.2mm Open circuit voltage: 11.1 Volts Matched load resistance: 3.07 ohms Matched load output voltage: 5.6 Volts Output current: 1.8 Amperes Output power: 10 watts Heat flow through modules: approximately 192 watts Heat flux: about 12 watts/cm2

• A standard thermoelectric generator, named standard TEG, is the only correct identifier for thermoelectric power generation
• represents this single layer power generation device
• Thermoelectric power sheet TEG1-241-1.4-1.2 ceramic piezoelectric high-power thermal energy to electrical energy
• 1 indicates that this is a single-layer power generation device, 199 is the total number of PN junction pairs of the thermoelectric power generation chip, 1.4 is the particle cross-sectional area size of the P junction and N junction individual, 1.4*1.4mm, 0.5 is the particle height of the individual P knot and N knot 0.5mm.